STW47NM60ND

N沟道600 V ， 0.075 I© （典型值） ，十五FDmeshâ ?? ¢ II功率MOSFET （具有快速二极管）的TO- 247封装 N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET with fast diode in a TO-247 package

Description

This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

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area amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities.

Application

■ Switching applications

– Automotive