STD11NM60ND

N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics

得捷:
MOSFET N-CH 600V 10A DPAK

欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STD11NM60ND, 10 A, Vds=600 V, 3引脚 TO-252封装

贸泽:
MOSFET N-channel 600V, 10A FDMesh II

艾睿:
As an alternative to traditional transistors, the STD11NM60ND power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 90000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

富昌:
N-Channel 600 V 0.45 Ohm Surface Mount FDmesh™ II Power MosFet - TO-252-3

Chip1Stop:
Trans MOSFET N-CH 600V 10A 3-Pin2+Tab DPAK T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK

Verical:
Trans MOSFET N-CH 600V 10A 3-Pin2+Tab DPAK T/R

儒卓力:
**N-CH 600V 10A 450mOhm TO252-3 **

力源芯城:
600V,10A,N沟道MOSFET

DeviceMart:
MOSFET N-CH 600V 10A DPAK

Win Source:
MOSFET N-CH 600V 10A DPAK