STMICROELECTRONICS STP20NM50 晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
通孔 N 通道 20A(Tc) 192W(Tc) TO-220
得捷:
MOSFET N-CH 500V 20A TO220AB
立创商城:
N沟道 500V 20A
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STP20NM50 power MOSFET. Its maximum power dissipation is 192000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 500V 20A 3-Pin3+Tab TO-220 Tube
Chip1Stop:
Trans MOSFET N-CH 500V 20A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 500V 20A 3-Pin3+Tab TO-220AB Tube
Newark:
MOSFET Transistor, N Channel, 20 A, 550 V, 250 mohm, 10 V, 4 V
Win Source:
MOSFET N-CH 500V 20A TO-220
额定电压DC 500 V
额定电流 20.0 A
针脚数 3
漏源极电阻 0.25 Ω
极性 N-Channel
耗散功率 192 W
阈值电压 4 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 20.0 A
上升时间 16 ns
输入电容Ciss 1480pF @25VVds
额定功率Max 192 W
下降时间 8.5 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 192W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Industrial, 工业, Power Management, Industrial, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP20NM50 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STW20NM50FD 意法半导体 | 类似代替 | STP20NM50和STW20NM50FD的区别 |
STP20NM50FD 意法半导体 | 类似代替 | STP20NM50和STP20NM50FD的区别 |
FDP20N50 飞兆/仙童 | 功能相似 | STP20NM50和FDP20N50的区别 |