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N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STF2N80K5, 2 A, Vds=800 V, 3引脚 TO-220FP封装
得捷:
MOSFET N-CH 800V 2A TO220FP
贸泽:
MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected
e络盟:
功率场效应管, MOSFET, N沟道, 800 V, 2 A, 3.5 ohm, TO-220FP, 通孔
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STF2N80K5 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 20000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh 5 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 800V 2A 3-Pin TO-220FP Tube
Chip1Stop:
Trans MOSFET N-CH 800V 2A 3-Pin3+Tab TO-220FP Tube
Verical:
Trans MOSFET N-CH 800V 2A 3-Pin3+Tab TO-220FP Tube
Win Source:
MOSFET N-CH 800V 2A TO220FP
通道数 1
针脚数 3
漏源极电阻 3.5 Ω
耗散功率 20 W
阈值电压 4 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
上升时间 12 ns
输入电容Ciss 105pF @100VVds
额定功率Max 25 W
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 20W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free