STMICROELECTRONICS STE48NM50 晶体管, MOSFET, N沟道, 24 A, 550 V, 0.08 ohm, 30 V, 4 V
N 通道 MDmesh™,500V,STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 550V 48A ISOTOP
欧时:
STMicroelectronics MDmesh 系列 N沟道 MOSFET 晶体管 STE48NM50, 48 A, Vds=500 V, 4引脚 ISOTOP封装
贸泽:
MOSFET N-Ch 500 Volt 48 Amp
e络盟:
STMICROELECTRONICS STE48NM50 晶体管, MOSFET, N沟道, 24 A, 550 V, 0.08 ohm, 30 V, 4 V
艾睿:
This STE48NM50 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 450000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube
富昌:
N-Channel 550 V 0.1 Ω MDmesh™ Power Mosfet - ISOTOP
Chip1Stop:
Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube
TME:
Module; single transistor; Uds:500V; Id:30A; ISOTOP; 450W; screw
Verical:
Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube
额定电压DC 550 V
额定电流 48.0 A
通道数 1
针脚数 4
漏源极电阻 80 mΩ
极性 N-Channel
耗散功率 450 W
阈值电压 4 V
漏源极电压Vds 550 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 48.0 A
上升时间 35 ns
输入电容Ciss 3700pF @25VVds
额定功率Max 450 W
下降时间 23 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 450W Tc
安装方式 Surface Mount
引脚数 4
封装 ISOTOP-4
长度 38.2 mm
宽度 25.5 mm
高度 12.2 mm
封装 ISOTOP-4
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STE48NM50 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STE53NC50 意法半导体 | 类似代替 | STE48NM50和STE53NC50的区别 |
STE70NM50 意法半导体 | 类似代替 | STE48NM50和STE70NM50的区别 |
STE110NS20FD 意法半导体 | 类似代替 | STE48NM50和STE110NS20FD的区别 |