STMICROELECTRONICS STP7NM60N 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
Make an effective common gate amplifier using this power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology.
针脚数 3
漏源极电阻 0.84 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 3 V
漏源极电压Vds 600 V
上升时间 10 ns
输入电容Ciss 363pF @50VVds
额定功率Max 45 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP7NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP13NM60N 意法半导体 | 类似代替 | STP7NM60N和STP13NM60N的区别 |
STP18N55M5 意法半导体 | 类似代替 | STP7NM60N和STP18N55M5的区别 |
STP19NM50N 意法半导体 | 类似代替 | STP7NM60N和STP19NM50N的区别 |