N 沟道 600 V 4.8 A 760 mOhm MDmesh M2 功率 Mosfet 5 x 6
N-Channel 600V 4.8A Tc 48W Tc Surface Mount PowerFlat™ 5x6 HV
得捷:
MOSFET N-CH 600V 4.8A PWRFLAT56
艾睿:
Create an effective common drain amplifier using this STL9N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology.
安富利:
Trans MOSFET N-CH 600V 4.8A 8-Pin PowerFLAT T/R
富昌:
N-沟道 600 V 4.8 A 860 mOhm 表面贴装 MDmesh M2 功率 MOSFET 5 x 6
Chip1Stop:
Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R
Verical:
Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R
漏源极电阻 0.86 Ω
极性 N-CH
耗散功率 48 W
漏源极电压Vds 600 V
连续漏极电流Ids 4.8A
上升时间 7.5 ns
输入电容Ciss 320pF @100VVds
额定功率Max 48 W
下降时间 13.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 48W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerVDFN-8
封装 PowerVDFN-8
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free