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N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics
得捷:
MOSFET N-CH 800V 10.5A D2PAK
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STB12NK80ZT4, 10.5 A, Vds=800 V, 3引脚
贸泽:
MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH
e络盟:
晶体管, MOSFET, N沟道, 5.25 A, 800 V, 0.65 ohm, 10 V, 3.75 V
艾睿:
Create an effective common drain amplifier using this STB12NK80ZT4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology.
安富利:
Trans MOSFET N-CH 800V 10.5A 3-Pin2+Tab D2PAK T/R
富昌:
N-Channel 800 V 0.75 Ohm Surface Mount Zener Protect SuperMesh MosFet-D2PAK
Chip1Stop:
Trans MOSFET N-CH 800V 10.5A 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 800V 10.5A 3-Pin2+Tab D2PAK T/R
Newark:
MOSFET Transistor, N Channel, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
儒卓力:
**N-CH 800V 10A 750mOhm TO263-3 **
DeviceMart:
MOSFET N-CH 800V 10.5A D2PAK
额定电压DC 800 V
额定电流 10.5 A
针脚数 3
漏源极电阻 0.65 Ω
极性 N-Channel
耗散功率 190 W
阈值电压 3.75 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 10.5 A
上升时间 18 ns
输入电容Ciss 2620pF @25VVds
额定功率Max 190 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB12NK80ZT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP12NK80Z 意法半导体 | 类似代替 | STB12NK80ZT4和STP12NK80Z的区别 |