



STMICROELECTRONICS STFI11N65M2 Power MOSFET, N Channel, 7A, 650V, 0.6Ω, 10V, 3V
通孔 N 通道 650 V 7A(Tc) 25W(Tc) I2PAKFP(TO-281)
得捷:
MOSFET N-CH 650V 7A I2PAKFP
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STFI11N65M2 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 25000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh ii plus technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 650V 7A 3-Pin I2PAK FP Tube
Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab I2PAKFP Tube
Verical:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab I2PAKFP Tube
通道数 1
漏源极电阻 0.6 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 3 V
漏源极电压Vds 650 V
上升时间 7.5 ns
输入电容Ciss 410pF @100VVds
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 25W Tc
安装方式 Through Hole
引脚数 3
封装 TO-262-3
封装 TO-262-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17