STFI11N65M2

STFI11N65M2图片1
STFI11N65M2图片2
STFI11N65M2图片3
STFI11N65M2图片4
STFI11N65M2概述

STMICROELECTRONICS STFI11N65M2 Power MOSFET, N Channel, 7A, 650V, 0.6Ω, 10V, 3V

通孔 N 通道 650 V 7A(Tc) 25W(Tc) I2PAKFP(TO-281)


得捷:
MOSFET N-CH 650V 7A I2PAKFP


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STFI11N65M2 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 25000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh ii plus technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 650V 7A 3-Pin I2PAK FP Tube


Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab I2PAKFP Tube


Verical:
Trans MOSFET N-CH 650V 7A 3-Pin3+Tab I2PAKFP Tube


STFI11N65M2中文资料参数规格
技术参数

通道数 1

漏源极电阻 0.6 Ω

极性 N-Channel

耗散功率 25 W

阈值电压 3 V

漏源极电压Vds 650 V

上升时间 7.5 ns

输入电容Ciss 410pF @100VVds

下降时间 15 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 25W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-262-3

外形尺寸

封装 TO-262-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STFI11N65M2
型号: STFI11N65M2
描述:STMICROELECTRONICS STFI11N65M2 Power MOSFET, N Channel, 7A, 650V, 0.6Ω, 10V, 3V

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司