N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics
### MOSFET ，STMicroelectronics
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STB14NK50ZT4, 14 A, Vds=500 V, 3引脚
立创商城:
N沟道 500V 14A
得捷:
MOSFET N-CH 500V 14A D2PAK
贸泽:
MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STB14NK50ZT4 power MOSFET is for you. Its maximum power dissipation is 150000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
富昌:
STB14NK 系列 N 沟道 500 V 11 A 380 mOhm 150 W 功率 Mosfet - D2PAK
Verical:
Trans MOSFET N-CH 500V 14A 3-Pin2+Tab D2PAK T/R
DeviceMart:
MOSFET N-CH 500V 14A D2PAK
Win Source:
MOSFET N-CH 500V 14A D2PAK
额定电压DC 500 V
额定电流 14.0 A
漏源极电阻 0.34 Ω
极性 N-Channel
耗散功率 150 W
阈值电压 3.75 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.00 A
上升时间 16 ns
输入电容Ciss 2000pF @25VVds
额定功率Max 150 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
