N沟道500V - 1.22Ω - 4.4A TO- 220 / FP -D / IPAK - D2 / I2PAK齐纳保护的超网MOSFET ? N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?MOSFET
通孔 N 通道 500 V 4.4A(Tc) 70W(Tc) TO-220AB
得捷:
MOSFET N-CH 500V 4.4A TO220AB
立创商城:
N沟道 500V 4.4A
艾睿:
Make an effective common gate amplifier using this STP5NK50Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 500V 4.4A 3-Pin3+Tab TO-220 Tube
富昌:
N-Channel 500 V 1.5 Ω SuperMESH Power MosFet - TO-220
Chip1Stop:
Trans MOSFET N-CH 500V 4.4A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3
Verical:
Trans MOSFET N-CH 500V 4.4A 3-Pin3+Tab TO-220AB Tube
Newark:
# STMICROELECTRONICS STP5NK50Z MOSFET Transistor, N Channel, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
儒卓力:
**N-CH 500V 4A 1500mOhm TO220-3 **
额定电压DC 500 V
额定电流 4.40 A
额定功率 70 W
漏源极电阻 1.22 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3.75 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 4.40 A
上升时间 10 ns
输入电容Ciss 535pF @25VVds
额定功率Max 70 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP5NK50Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 类似代替 | STP5NK50Z和STP55NF06的区别 |
STP60NF06 意法半导体 | 类似代替 | STP5NK50Z和STP60NF06的区别 |
STW20NK50Z 意法半导体 | 类似代替 | STP5NK50Z和STW20NK50Z的区别 |