




N沟道650 V, 0.33 Ω , 12一个的MDmesh II ™功率MOSFET TO- 220 , TO- 220FP , D2PAK , I2PAK , TO- 247 N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
通孔 N 通道 650 V 12A(Tc) 125W(Tc) TO-220AB
得捷:
MOSFET N-CH 650V 12A TO220AB
贸泽:
MOSFET N-channel 650V
艾睿:
Increase the current or voltage in your circuit with this STP14NM65N power MOSFET from STMicroelectronics. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
Win Source:
MOSFET N-CH 650V 12A TO-220
极性 N-Channel
耗散功率 125 W
漏源极电压Vds 650 V
连续漏极电流Ids 6.00 A
上升时间 13 ns
输入电容Ciss 1300pF @50VVds
额定功率Max 125 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP14NM65N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP11NM65N 意法半导体 | 类似代替 | STP14NM65N和STP11NM65N的区别 |
STW14NM65N 意法半导体 | 类似代替 | STP14NM65N和STW14NM65N的区别 |
IPP65R380C6 英飞凌 | 功能相似 | STP14NM65N和IPP65R380C6的区别 |