STP90N6F6

STP90N6F6图片1
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STP90N6F6概述

N 沟道 60 V 84 A 5.9 mOhm STripFET VI DeepGATE 功率 Mosfet - TO-220AB

通孔 N 通道 60 V 84A(Tc) 136W(Tc) TO-220AB


得捷:
MOSFET N-CH 60V 84A TO220


艾睿:
Compared to traditional transistors, STP90N6F6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 136000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet technology.


安富利:
Trans MOSFET N-CH 60V 84A 3-Pin TO-220 Tube


富昌:
N 沟道 60 V 84 A 5.9 mOhm STripFET VI DeepGATE 功率 Mosfet - TO-220AB


Chip1Stop:
Trans MOSFET N-CH 60V 84A 3-Pin3+Tab TO-220 Tube


Verical:
Trans MOSFET N-CH 60V 84A 3-Pin3+Tab TO-220AB Tube


Win Source:
MOSFET N-CH 60V 84A TO-220AB


STP90N6F6中文资料参数规格
技术参数

耗散功率 136 W

漏源极电压Vds 60 V

上升时间 42 ns

输入电容Ciss 4295pF @25VVds

额定功率Max 136 W

下降时间 16 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 136W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买STP90N6F6
型号: STP90N6F6
描述:N 沟道 60 V 84 A 5.9 mOhm STripFET VI DeepGATE 功率 Mosfet - TO-220AB

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