N 通道 STripFET™ F3,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F3,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N CH 100V 20A PWRFLT5X6
欧时:
STMicroelectronics STripFET F3 系列 Si N沟道 MOSFET STL8N10LF3, 20 A, Vds=100 V, 8引脚 PowerFLAT封装
e络盟:
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.025 ohm, 10 V, 3 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STL8N10LF3 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 70000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet f3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
Trans MOSFET N-CH 100V 20A 8-Pin PowerFLAT 5x6 T/R
Chip1Stop:
Trans MOSFET N-CH 100V 20A Automotive 8-Pin Power Flat T/R
Verical:
Trans MOSFET N-CH 100V 20A Automotive 8-Pin Power Flat T/R
针脚数 8
漏源极电阻 0.025 Ω
极性 N-CH
耗散功率 70 W
阈值电压 1V ~ 3V
漏源极电压Vds 100 V
连续漏极电流Ids 20A
上升时间 9.6 ns
输入电容Ciss 970pF @25VVds
额定功率Max 70 W
下降时间 5.2 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 4.3W Ta, 70W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerSMD-8
长度 6.15 mm
宽度 5.2 mm
高度 0.95 mm
封装 PowerSMD-8
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STL8N10LF3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SD-30 Secos | 功能相似 | STL8N10LF3和SD-30的区别 |