N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ DeepGate™,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 30V POWERFLAT
欧时:
### N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
艾睿:
As an alternative to traditional transistors, the STL6N3LLH6 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with stripfet technology.
安富利:
Trans MOSFET N-CH 30V 6A 6-Pin PowerFLAT 2x2 T/R
Chip1Stop:
Trans MOSFET N-CH 30V 6A 6-Pin Power Flat T/R
Verical:
Trans MOSFET N-CH 30V 13A 6-Pin Power Flat T/R
通道数 1
极性 N-CH
耗散功率 2.4 W
阈值电压 1 V
漏源极电压Vds 30 V
连续漏极电流Ids 6A
上升时间 11.2 ns
输入电容Ciss 283pF @24VVds
下降时间 5.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.4W Tc
安装方式 Surface Mount
引脚数 6
封装 PowerFLAT-2x2-6
长度 2.1 mm
宽度 2.1 mm
高度 0.75 mm
封装 PowerFLAT-2x2-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 PB free