STMICROELECTRONICS STP22NM60N 功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
The is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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- 100% Avalanche tested
针脚数 3
漏源极电阻 0.2 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 16A
输入电容Ciss 1300pF @50VVds
额定功率Max 125 W
下降时间 38 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP22NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP21NM60ND 意法半导体 | 类似代替 | STP22NM60N和STP21NM60ND的区别 |
STP23NM60ND 意法半导体 | 类似代替 | STP22NM60N和STP23NM60ND的区别 |
STP15NM60ND 意法半导体 | 类似代替 | STP22NM60N和STP15NM60ND的区别 |