N 通道 MDmesh™ M2 系列,STMicroelectronicsSTMicroelecronics 的一系列高电压功率 MOSFET。 MDmesh M2 系列凭借其低栅极电荷和出色的输出电容特性,非常适合用于谐振型开关电源(LLC 转换器)。### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ M2 系列,STMicroelectronics
STMicroelecronics 的一系列高电压功率 MOSFET。 MDmesh M2 系列凭借其低栅极电荷和出色的输出电容特性,非常适合用于谐振型开关电源(LLC 转换器)。
得捷:
MOSFET N-CH 600V 3.7A IPAK
欧时:
STMicroelectronics MDmesh M2 系列 Si N沟道 MOSFET STU5N60M2, 3.5 A, Vds=650 V, 3引脚 IPAK TO-251封装
贸泽:
MOSFET N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STU5N60M2 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh ii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 3.5A 3-Pin IPAK Tube
Chip1Stop:
Trans MOSFET N-CH 650V 3.7A 3-Pin3+Tab IPAK Tube
Verical:
Trans MOSFET N-CH 650V 3.5A 3-Pin3+Tab IPAK Tube
漏源极电阻 1.4 Ω
极性 N-CH
耗散功率 45 W
漏源极电压Vds 600 V
连续漏极电流Ids 3.7A
上升时间 3 ns
输入电容Ciss 165pF @100VVds
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free