N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
得捷:
MOSFET N-CH 800V 6A DPAK
立创商城:
N沟道 800V 6A
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STD7N80K5, 6 A, Vds=800 V, 3引脚 DPAK TO-252封装
e络盟:
晶体管, MOSFET, N沟道, 6 A, 800 V, 0.95 ohm, 10 V, 4 V
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STD7N80K5 power MOSFET. Its maximum power dissipation is 110000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology.
安富利:
Trans MOSFET N-CH 800V 6A 3-Pin DPAK T/R
富昌:
N-沟道 800 V 1.2 Ω 13.4 nC SuperMESH 5 功率 Mosfet - TO-252 DPAK
TME:
Transistor: N-MOSFET; unipolar; 800V; 3.8A; 110W; DPAK
Verical:
Trans MOSFET N-CH 800V 6A 3-Pin2+Tab DPAK T/R
儒卓力:
**N-CH 800V 950mOhm 6A TO252 **
针脚数 3
漏源极电阻 0.95 Ω
耗散功率 110 W
阈值电压 4 V
漏源极电压Vds 800 V
上升时间 8.3 ns
输入电容Ciss 360pF @100VVds
额定功率Max 110 W
下降时间 20.2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD7N80K5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP7N80K5 意法半导体 | 完全替代 | STD7N80K5和STP7N80K5的区别 |
STU7N80K5 意法半导体 | 功能相似 | STD7N80K5和STU7N80K5的区别 |