

MOSFET N-Ch 650V 0.198Ω 15A MDmeshTM V
N-Channel 650V 15A Tc 110W Tc Through Hole I2PAK
得捷:
MOSFET N CH 650V 15A I2PAK
贸泽:
MOSFET N-Ch 650 V 0.198 Ohm 15 A MDmeshTM V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STI18N65M5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 650V 15A 3-Pin3+Tab I2PAK Tube
DeviceMart:
MOSFET N CH 650V 15A I2PAK
通道数 1
漏源极电阻 198 mΩ
耗散功率 110 W
阈值电压 4 V
漏源极电压Vds 650 V
漏源击穿电压 650 V
上升时间 7 ns
输入电容Ciss 1240pF @100VVds
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 110W Tc
安装方式 Through Hole
引脚数 3
封装 TO-262-3
封装 TO-262-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STI18N65M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP18N65M5 意法半导体 | 功能相似 | STI18N65M5和STP18N65M5的区别 |