N 通道 STripFET™ H7 系列,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ H7 系列,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 100V 45A TO220
立创商城:
N沟道 100V 45A
欧时:
STMicroelectronics STripFET H7 系列 Si N沟道 MOSFET STP45N10F7, 45 A, Vds=100 V, 3引脚 TO-220封装
e络盟:
晶体管, MOSFET, N沟道, 45 A, 100 V, 0.0145 ohm, 10 V, 4.5 V
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STP45N10F7 power MOSFET. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet vii technology.
安富利:
Trans MOSFET N-CH 100V 45A 3-Pin TO-220 Tube
富昌:
N沟道 100 V 0.018 Ohm 法兰安装 功率 Mosfet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 100V 45A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 100V 45A 3-Pin3+Tab TO-220AB Tube
力源芯城:
100V,0.018Ohm,45A N沟道功率MOSFET
Win Source:
MOSFET N-CH 100V 45A TO-220
针脚数 3
漏源极电阻 0.0145 Ω
耗散功率 60 W
阈值电压 4.5 V
漏源极电压Vds 100 V
上升时间 17 ns
输入电容Ciss 1640pF @50VVds
额定功率Max 60 W
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP45N10F7 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
NTP6411ANG 安森美 | 功能相似 | STP45N10F7和NTP6411ANG的区别 |