N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STP3N80K5, 2.5 A, Vds=800 V, 3引脚 TO-220封装
得捷:
MOSFET N-CH 800V 2.5A TO220
立创商城:
STP3N80K5
贸泽:
MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected
e络盟:
晶体管, MOSFET, N沟道, 2.5 A, 800 V, 2.8 ohm, 10 V, 4 V
艾睿:
Increase the current or voltage in your circuit with this STP3N80K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 25000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 800V 2.5A 3-Pin TO-220 Tube
富昌:
单 N沟道 800 V 3.5 Ω 60 W 法兰安装 功率 Mosfet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 800V 2.5A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 800V 2.5A 3-Pin3+Tab TO-220AB Tube
针脚数 3
漏源极电阻 2.8 Ω
耗散功率 60 W
阈值电压 4 V
漏源极电压Vds 800 V
上升时间 7.5 ns
输入电容Ciss 130pF @100VVds
额定功率Max 60 W
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free