







N沟道900 V, 0.25 I© (典型值) , 18.5齐纳保护SuperMESHâ ??在D2PAK , TO- 220FP , TO- 220和TO- 247封装¢ 5功率MOSFET N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH⢠5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
通孔 N 通道 18.5A(Tc) 250W(Tc) TO-247-3
立创商城:
STW21N90K5
得捷:
MOSFET N-CH 900V 18.5A TO247-3
e络盟:
晶体管, MOSFET, N沟道, 18.5 A, 900 V, 0.25 ohm, 10 V, 4 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STW21N90K5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 250000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 900V 18.5A 3-Pin3+Tab TO-247 Tube
富昌:
TO 247
TME:
Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; TO247
Verical:
Trans MOSFET N-CH 900V 18.5A 3-Pin3+Tab TO-247 Tube
儒卓力:
**N-CH 900V 17A 299mOhm TO247-3 **
力源芯城:
900V,0.25Ω,18.5A,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 900V 18.5A TO-247
Win Source:
MOSFET N-CH 900V 18.5A TO-247
针脚数 3
漏源极电阻 0.25 Ω
极性 N-CH
耗散功率 250 W
阈值电压 4 V
漏源极电压Vds 900 V
连续漏极电流Ids 18.5A
上升时间 27 ns
输入电容Ciss 1645pF @100VVds
额定功率Max 250 W
下降时间 40 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STW21N90K5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IXFX26N90 IXYS Semiconductor | 功能相似 | STW21N90K5和IXFX26N90的区别 |
IXFK25N90 IXYS Semiconductor | 功能相似 | STW21N90K5和IXFK25N90的区别 |
IXFX25N90 IXYS Semiconductor | 功能相似 | STW21N90K5和IXFX25N90的区别 |