STMICROELECTRONICS STB80NF55-06T4 晶体管, MOSFET, N沟道, 40 A, 55 V, 5 mohm, 10 V, 3 V
The is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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- Exceptional dV/dt capability
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- 100% Avalanche tested
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- Application oriented characterization
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- -55 to 175°C Operating junction temperature
额定电压DC 55.0 V
额定电流 80.0 A
通道数 1
针脚数 3
漏源极电阻 0.005 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 55 V
漏源击穿电压 55.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 80.0 A
上升时间 155 ns
输入电容Ciss 4400pF @25VVds
额定功率Max 300 W
下降时间 65 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
制造应用 Power Management, Industrial, 工业, Power Management, Industrial, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB80NF55-06T4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SPB80N06S2-H5 英飞凌 | 功能相似 | STB80NF55-06T4和SPB80N06S2-H5的区别 |
SPB80N06S2L-05 英飞凌 | 功能相似 | STB80NF55-06T4和SPB80N06S2L-05的区别 |
SPB80N06S2-05 英飞凌 | 功能相似 | STB80NF55-06T4和SPB80N06S2-05的区别 |