STD4N62K3

STMICROELECTRONICS  STD4N62K3  功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V

N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics

得捷:
MOSFET N-CH 620V 3.8A DPAK

欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STD4N62K3, 3.8 A, Vds=620 V, 3引脚

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STD4N62K3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 70000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 620V 3.8A 3-Pin2+Tab DPAK T/R

富昌:
N-Channel 620 V 1.95 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3

Chip1Stop:
Trans MOSFET N-CH 620V 3.8A 3-Pin2+Tab DPAK T/R

TME:
Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK

Verical:
Trans MOSFET N-CH 620V 3.8A 3-Pin2+Tab DPAK T/R

儒卓力:
**N-CH 620V 3,8A 2000mOhm TO252 **

力源芯城:
620V,1.7Ω,3.8A,N沟道功率MOSFET

DeviceMart:
MOSFET N-CH 620V 3.8A DPAK

Win Source:
MOSFET N-CH 620V 3.8A DPAK