Power N-CH 600V 5.5A
As an alternative to traditional transistors, the power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 48000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 300 °C.
漏源极电阻 0.66 Ω
极性 N-CH
耗散功率 48 W
漏源极电压Vds 600 V
连续漏极电流Ids 5.5A
上升时间 8 ns
输入电容Ciss 400pF @100VVds
额定功率Max 48 W
下降时间 13.2 ns
工作温度Max 300 ℃
工作温度Min -55 ℃
耗散功率Max 48W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-5x6-HV-8
封装 PowerFLAT-5x6-HV-8
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free