STH260N6F6-6

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STH260N6F6-6概述

H2PAK N-CH 60V 180A

N-Channel 60V 180A Tc 300W Tc Surface Mount H2PAK-6


得捷:
MOSFET N-CH 60V 180A H2PAK-6


艾睿:
Compared to traditional transistors, STH260N6F6-6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.


安富利:
Trans MOSFET N-CH 60V 180A 6-Pin H2PAK T/R


Chip1Stop:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab H2PAK T/R


Verical:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab H2PAK T/R


STH260N6F6-6中文资料参数规格
技术参数

极性 N-CH

耗散功率 300 W

漏源极电压Vds 60 V

连续漏极电流Ids 180A

上升时间 165 ns

输入电容Ciss 11800pF @25VVds

额定功率Max 300 W

下降时间 62.6 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 300W Tc

封装参数

安装方式 Surface Mount

引脚数 7

封装 TO-263-7

外形尺寸

封装 TO-263-7

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买STH260N6F6-6
型号: STH260N6F6-6
描述:H2PAK N-CH 60V 180A

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