STP52N25M5

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STP52N25M5概述

N沟道250 V , 0.055 I© , 28 A, TO- 220 MDmeshTM V功率MOSFET N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET

Compared to traditional transistors, power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 110000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

STP52N25M5中文资料参数规格
技术参数

极性 N-CH

耗散功率 110 W

漏源极电压Vds 250 V

连续漏极电流Ids 28A

上升时间 18 ns

输入电容Ciss 1770pF @50VVds

额定功率Max 110 W

下降时间 64 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 110W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

材质 Silicon

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STP52N25M5
型号: STP52N25M5
描述:N沟道250 V , 0.055 I© , 28 A, TO- 220 MDmeshTM V功率MOSFET N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET
替代型号STP52N25M5
型号/品牌 代替类型 替代型号对比

STP52N25M5

ST Microelectronics 意法半导体

当前型号

当前型号

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