N沟道250 V , 0.055 I© , 28 A, TO- 220 MDmeshTM V功率MOSFET N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET
Compared to traditional transistors, power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 110000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
极性 N-CH
耗散功率 110 W
漏源极电压Vds 250 V
连续漏极电流Ids 28A
上升时间 18 ns
输入电容Ciss 1770pF @50VVds
额定功率Max 110 W
下降时间 64 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 110W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP52N25M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FDP33N25 飞兆/仙童 | 功能相似 | STP52N25M5和FDP33N25的区别 |
FDPF51N25YDTU 飞兆/仙童 | 功能相似 | STP52N25M5和FDPF51N25YDTU的区别 |