N沟道 75V 78A
Use STMicroelectronics" power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 150000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet technology.
通道数 1
极性 N-CH
耗散功率 150 W
阈值电压 4 V
漏源极电压Vds 75 V
连续漏极电流Ids 78A
上升时间 33 ns
输入电容Ciss 5015pF @25VVds
额定功率Max 150 W
下降时间 14 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP78N75F4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP13NM60N 意法半导体 | 类似代替 | STP78N75F4和STP13NM60N的区别 |
STP18N55M5 意法半导体 | 类似代替 | STP78N75F4和STP18N55M5的区别 |
STP19NM50N 意法半导体 | 类似代替 | STP78N75F4和STP19NM50N的区别 |