N-channel 600V, 0.59Ω, 7A, FDmeshTM II Power MOSFET with fast diode DPAK
N-Channel 600V 7A Tc 70W Tc Surface Mount DPAK
得捷:
MOSFET N-CH 600V 7A DPAK
贸泽:
MOSFET N-Ch 600 Volt 7 Amp FDMesh
艾睿:
As an alternative to traditional transistors, the STD8NM60ND power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 70000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh ii technology.
安富利:
Trans MOSFET N-CH 600V 7A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 600V 7A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 600V 7A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 600V 7A DPAK
通道数 1
漏源极电阻 0.59 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 4 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
上升时间 22 ns
输入电容Ciss 560pF @50VVds
额定功率Max 70 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD8NM60ND ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD10NM60N 意法半导体 | 类似代替 | STD8NM60ND和STD10NM60N的区别 |