TO-247 N-CH 650V 12A
N-Channel 650V 12A Tc 90W Tc Through Hole TO-247-3
得捷:
MOSFET N-CH 650V 12A TO247-3
贸泽:
MOSFET MDmesh V 650V 12A 710V VDSS <0.299 Ohm
艾睿:
Use STMicroelectronics&s; STW16N65M5 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology.
DeviceMart:
MOSFET N-CH 650V 12A TO-247
Win Source:
MOSFET N-CH 650V 12A TO-247
极性 N-CH
耗散功率 90 W
漏源极电压Vds 650 V
连续漏极电流Ids 12A
上升时间 7 ns
输入电容Ciss 1250pF @100VVds
额定功率Max 90 W
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STW16N65M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STW18N65M5 意法半导体 | 类似代替 | STW16N65M5和STW18N65M5的区别 |
STP16N65M5 意法半导体 | 功能相似 | STW16N65M5和STP16N65M5的区别 |
IPP60R299CP 英飞凌 | 功能相似 | STW16N65M5和IPP60R299CP的区别 |