STMICROELECTRONICS STP9NK70Z 功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics
得捷:
MOSFET N-CH 700V 7.5A TO220AB
立创商城:
STP9NK70Z
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 N沟道 MOSFET 晶体管 STP9NK70Z, 7.5 A, Vds=700 V, 3引脚 TO-220封装
e络盟:
晶体管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STP9NK70Z power MOSFET is for you. Its maximum power dissipation is 115000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 700V 7.5A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 700V; 4.7A; 115W; TO220-3
Verical:
Trans MOSFET N-CH 700V 7.5A 3-Pin3+Tab TO-220AB Tube
Newark:
# STMICROELECTRONICS STP9NK70Z Power MOSFET, N Channel, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
Win Source:
N-CHANNEL 7V - 1ohm - 7.5A TO-22/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET
额定电压DC 700 V
额定电流 7.50 A
针脚数 3
漏源极电阻 1 Ω
极性 N-Channel
耗散功率 115 W
阈值电压 3.75 V
漏源极电压Vds 700 V
漏源击穿电压 700 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 4.00 A
上升时间 17 ns
输入电容Ciss 1370pF @25VVds
额定功率Max 115 W
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 115W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP9NK70Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP7NK80Z 意法半导体 | 类似代替 | STP9NK70Z和STP7NK80Z的区别 |
STP6NK70Z 意法半导体 | 类似代替 | STP9NK70Z和STP6NK70Z的区别 |
STD3NK50ZT4 意法半导体 | 功能相似 | STP9NK70Z和STD3NK50ZT4的区别 |