D2PAK N-CH 650V 16A
N-Channel 650V 16A Tc 150W Tc Surface Mount D2PAK
得捷:
MOSFET N-CH 650V 16A D2PAK
艾睿:
Make an effective common gate amplifier using this STB24N65M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with mdmesh m2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 650V 16A 3-Pin D2PAK T/R
富昌:
N-沟道 650 V 0.23 Ω 150 W 表面贴装 MDmesh M2 功率 Mosfet - D2PAK
Verical:
Trans MOSFET N-CH 650V 16A 3-Pin2+Tab D2PAK T/R
儒卓力:
**N-CH 650V 16A 185mOhm TO263 **
漏源极电阻 0.23 Ω
极性 N-CH
耗散功率 150 W
漏源极电压Vds 650 V
连续漏极电流Ids 16A
上升时间 9.5 ns
输入电容Ciss 1060pF @100VVds
下降时间 25.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STB24N65M2 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP24N65M2 意法半导体 | 完全替代 | STB24N65M2和STP24N65M2的区别 |
TK17J65U 东芝 | 功能相似 | STB24N65M2和TK17J65U的区别 |