








200V,61A,N沟道MOSFET
通孔 N 通道 200 V 61A(Tc) 190W(Tc) TO-220AB
得捷:
MOSFET N-CH 200V 61A TO220AB
艾睿:
This STP80N20M5 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 190000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh v technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 200V 61A 3-Pin3+Tab TO-220 Tube
力源芯城:
200V,61A,N沟道MOSFET
Win Source:
MOSFET N-CH 200V 61A TO-220
漏源极电阻 0.019 Ω
极性 N-Channel
耗散功率 190 W
阈值电压 4 V
漏源极电压Vds 200 V
输入电容Ciss 4329pF @50VVds
额定功率Max 190 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP80N20M5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP13NM60N 意法半导体 | 类似代替 | STP80N20M5和STP13NM60N的区别 |
STP18N55M5 意法半导体 | 类似代替 | STP80N20M5和STP18N55M5的区别 |
STP19NM50N 意法半导体 | 类似代替 | STP80N20M5和STP19NM50N的区别 |