










N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STP4N80K5, 3 A, Vds=800 V, 3引脚 TO-220封装
得捷:
MOSFET N-CH 800V 3A TO220
立创商城:
STP4N80K5
e络盟:
功率场效应管, MOSFET, N沟道, 800 V, 3 A, 2.1 ohm, TO-220AB, 通孔
艾睿:
Create an effective common drain amplifier using this STP4N80K5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 800V 3A 3-Pin TO-220 Tube
富昌:
单 N沟道 800 V 60 W 3 A 2.5 Ω 法兰安装 功率 MosFET - TO-220AB
Chip1Stop:
Trans MOSFET N-CH 800V 3A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 800V 3A 3-Pin3+Tab TO-220AB Tube
Win Source:
Ultra low gate charge | MOSFET N-CH 800V 3A TO-220AB
针脚数 3
漏源极电阻 2.1 Ω
极性 N-CH
耗散功率 60 W
阈值电压 4 V
漏源极电压Vds 800 V
连续漏极电流Ids 3A
上升时间 15 ns
输入电容Ciss 175pF @100VVds
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准
含铅标准 Lead Free