STD17NF03LT4

N 通道 STripFET™，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 3.6A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.020Ω/Ohm @1.6A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.5V 耗散功率Pd Power Dissipation| 75W Description & Applications| TYPICAL RDSon = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDSon x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED 描述与应用| 典型的RDS（on）= 0.015Ω 典型的Qg=18 NC@ 10V 最优的RDS（on）×QG权衡 减少传导损耗 减少开关损耗

欧时:
STMicroelectronics STripFET 系列 Si N沟道 MOSFET STD17NF03LT4, 17 A, Vds=30 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET N-CH 30V 17A DPAK

立创商城:
N沟道 30V 17A

贸泽:
MOSFET N-Ch 30 Volt 17 Amp

e络盟:
晶体管, MOSFET, N沟道, 17 A, 30 V, 0.05 ohm, 16 V, 1.5 V

艾睿:
Trans MOSFET N-CH 30V 17A 3-Pin2+Tab DPAK T/R

安富利:
Trans MOSFET N-CH 30V 17A 3-Pin2+Tab DPAK T/R

富昌:
N-沟道 30 V 0.05 Ohm 表面贴装 STripFET II 功率 MosFet - TO-252-3

Chip1Stop:
Trans MOSFET N-CH 30V 17A 3-Pin2+Tab DPAK T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK

Verical:
Trans MOSFET N-CH 30V 17A 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  STD17NF03LT4  MOSFET Transistor, N Channel, 17 A, 30 V, 50 mohm, 16 V, 1.5 V

儒卓力:
**N-CH 30V 17A 50mOhm TO252-3 **

DeviceMart:
MOSFET N-CH 30V 17A DPAK

Win Source:
MOSFET N-CH 30V 17A DPAK