STD5NM60T4

STMICROELECTRONICS  STD5NM60T4  功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V

表面贴装型 N 通道 600 V 5A（Tc） 96W（Tc） DPAK

欧时:
STMicroelectronics, STD5NM60T4

立创商城:
N沟道 600V 5A

得捷:
MOSFET N-CH 600V 5A DPAK

贸泽:
MOSFET N-Ch 600 Volt 5 Amp

e络盟:
晶体管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V

艾睿:
Compared to traditional transistors, STD5NM60T4 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 96000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R

Chip1Stop:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK

Verical:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  STD5NM60T4  Power MOSFET, N Channel, 5 A, 650 V, 1 ohm, 10 V, 4 V

儒卓力:
**N-CH 650V 5A 1000mOhm TO252-3 **

Win Source:
MOSFET N-CH 600V 5A DPAK