
















N 通道 STripFET™ F3,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F3,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 30V 11A 8SO
欧时:
### N 通道 STripFET™ F3,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
艾睿:
Use STMicroelectronics&s; STS11NF30L power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with stripfet ii technology.
安富利:
Trans MOSFET N-CH 30V 11A 8-Pin SO N T/R
富昌:
STS11NF30L 系列 30 V 10.5 mOhm N-沟道 STripFET™ II 功率 Mosfet - SOIC-8
Chip1Stop:
Trans MOSFET N-CH 30V 11A 8-Pin SO N T/R
TME:
Transistor: N-MOSFET; STripFET™ F7; unipolar; 30V; 11A; 2.5W; SO8
Verical:
Trans MOSFET N-CH 30V 11A 8-Pin SO N T/R
Newark:
# STMICROELECTRONICS STS11NF30L MOSFET Transistor, N Channel, 11 A, 30 V, 10.5 mohm, 10 V, 1 V
Win Source:
MOSFET N-CH 30V 11A 8-SOIC
额定电压DC 30.0 V
额定电流 11.0 A
额定功率 2.5 W
漏源极电阻 0.0085 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±18.0 V
连续漏极电流Ids 11.0 A
上升时间 39 ns
输入电容Ciss 1440pF @25VVds
额定功率Max 2.5 W
下降时间 16 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.25 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STS11NF30L ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STS17NF3LL 意法半导体 | 类似代替 | STS11NF30L和STS17NF3LL的区别 |
FDS8878 飞兆/仙童 | 功能相似 | STS11NF30L和FDS8878的区别 |
FDS8880 飞兆/仙童 | 功能相似 | STS11NF30L和FDS8880的区别 |