STMICROELECTRONICS STF3NK80Z 功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
The is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
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- 100% Avalanche tested
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- Very low intrinsic capacitance
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- Very good manufacturing repeatability
额定电压DC 800 V
额定电流 2.50 A
额定功率 25 W
针脚数 3
漏源极电阻 4.5 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 3.75 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 2.50 A
上升时间 27 ns
输入电容Ciss 485pF @25VVds
额定功率Max 25 W
下降时间 40 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 25W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Industrial, Power Management, 工业, Industrial, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STF3NK80Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP4NK60ZFP 意法半导体 | 类似代替 | STF3NK80Z和STP4NK60ZFP的区别 |
STP6NK60ZFP 意法半导体 | 类似代替 | STF3NK80Z和STP6NK60ZFP的区别 |
STP7NK80ZFP 意法半导体 | 类似代替 | STF3NK80Z和STP7NK80ZFP的区别 |