TO-247 N-CH 600V 51A
通孔 N 通道 51A(Tc) 350W(Tc) TO-247-3
得捷:
MOSFET N-CH 600V 51A TO247-3
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STW55NM60N power MOSFET. Its maximum power dissipation is 350000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology.
Win Source:
MOSFET N-CH 600V 51A TO-247
极性 N-Channel
耗散功率 350W Tc
漏源极电压Vds 600 V
连续漏极电流Ids 25.5 A
上升时间 30 ns
输入电容Ciss 5800pF @50VVds
额定功率Max 350 W
下降时间 70 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 350W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STW55NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STW60N65M5 意法半导体 | 类似代替 | STW55NM60N和STW60N65M5的区别 |
STW56NM60N 意法半导体 | 类似代替 | STW55NM60N和STW56NM60N的区别 |
STFW60N65M5 意法半导体 | 功能相似 | STW55NM60N和STFW60N65M5的区别 |