30V,7.5mΩ,11A,N沟道功率MOSFET
Create an effective common drain amplifier using this power MOSFET from STMicroelectronics. Its maximum power dissipation is 50000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with stripfet vi technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
通道数 1
漏源极电阻 6 mΩ
极性 N-CH
耗散功率 50 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 11A
上升时间 30 ns
输入电容Ciss 1690pF @24VVds
额定功率Max 50 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2W Ta, 50W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerFLAT-8
封装 PowerFLAT-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free