N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 800V 14A TO220
立创商城:
STP15N80K5
欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STP15N80K5, 14 A, Vds=800 V, 3引脚 TO-220封装
贸泽:
MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
e络盟:
晶体管, MOSFET, N沟道, 14 A, 800 V, 0.3 ohm, 10 V, 4 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STP15N80K5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 190000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 800V 14A 3-Pin3+Tab TO-220 Tube
富昌:
STP15K80K5 系列 800 V 375 mOhm N 沟道 SuperMESH 5 功率 Mosfet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 800V 14A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 800V 14A 3-Pin3+Tab TO-220AB Tube
针脚数 3
漏源极电阻 0.3 Ω
极性 N-CH
耗散功率 190 W
阈值电压 4 V
漏源极电压Vds 800 V
连续漏极电流Ids 14A
上升时间 17.6 ns
输入电容Ciss 1100pF @100VVds
额定功率Max 190 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP15N80K5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB15N80K5 意法半导体 | 完全替代 | STP15N80K5和STB15N80K5的区别 |
SPP17N80C3 英飞凌 | 功能相似 | STP15N80K5和SPP17N80C3的区别 |