N 通道 STripFET™ F7 系列,STMicroelectronicsSTMicroelectronics STripFET™ F7 系列低电压 MOSFET 具有较低设备通态电阻,内部电容和栅极电荷降低,以便更快、更高效地切换。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F7 系列,STMicroelectronics
STMicroelectronics STripFET™ F7 系列低电压 MOSFET 具有较低设备通态电阻,内部电容和栅极电荷降低,以便更快、更高效地切换。
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics STripFET F7 系列 Si N沟道 MOSFET STP100N6F7, 100 A, Vds=60 V, 3引脚 TO-220封装
立创商城:
N沟道 60V 100A
得捷:
MOSFET N-CH 60V 100A TO220
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STP100N6F7 power MOSFET can provide a solution. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet f7 technology.
安富利:
POWER MOSFET
TME:
Transistor: N-MOSFET; unipolar; 60V; 75A; 125W; TO220-3
Verical:
Trans MOSFET N-CH 60V 100A 3-Pin3+Tab TO-220AB Tube
儒卓力:
**N-CH 60V 100A 5,6mOhm TO220-3 **
针脚数 3
漏源极电阻 0.0047 Ω
极性 N-CH
耗散功率 125 W
阈值电压 4 V
输入电容 1980 pF
漏源极电压Vds 60 V
连续漏极电流Ids 100A
上升时间 55.5 ns
输入电容Ciss 1980pF @25VVds
下降时间 15 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 医用
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99