N 通道 STripFET™ DeepGate™,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ DeepGate™,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 40V 200A H2PAK
欧时:
STMicroelectronics DeepGate, STripFET 系列 Si N沟道 MOSFET STH320N4F6-2, 200 A, Vds=40 V, 3引脚 H2PAK封装
贸泽:
MOSFET N-CH 40V 11mOhm typ 200A STripFET
艾睿:
This STH320N4F6-2 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 40V 200A 3-Pin H2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 40V 200A Automotive 3-Pin2+Tab H2PAK T/R
Verical:
Trans MOSFET N-CH 40V 200A Automotive 3-Pin2+Tab H2PAK T/R
通道数 1
极性 N-CH
耗散功率 340 W
阈值电压 2 V
漏源极电压Vds 40 V
连续漏极电流Ids 200A
上升时间 98 ns
输入电容Ciss 13800pF @15VVds
下降时间 95 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 15.8 mm
宽度 10.4 mm
高度 4.8 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free