STD3NM60N

N 通道 MDmesh™，600V/650V，STMicroelectronics### MOSFET 晶体管，STMicroelectronics

N 通道 MDmesh™，600V/650V，STMicroelectronics

### MOSFET ，STMicroelectronics

立创商城:
N沟道 600V 3.3A

得捷:
MOSFET N-CH 600V 3.3A DPAK

欧时:
STMicroelectronics MDmesh 系列 Si N沟道 MOSFET STD3NM60N, 3.3 A, Vds=650 V, 3引脚 DPAK TO-252封装

e络盟:
晶体管, MOSFET, N沟道, 3.3 A, 600 V, 1.6 ohm, 10 V, 3 V

艾睿:
Make an effective common source amplifier using this STD3NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 50000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 3.3A 3-Pin2+Tab DPAK T/R

富昌:
STN3NM60N 系列 N 沟道 600 V 3.3 A 1.8 Ohm MDmesh™ II 功率 Mosfet - TO-252

Verical:
Trans MOSFET N-CH 600V 3.3A 3-Pin2+Tab DPAK T/R

力源芯城:
600V,3.3A,N沟道MOSFET

DeviceMart:
MOSFET N-CH 600V 3.3A DPAK