






N沟道30 V , 0.0072 Ω , 48采用DPAK , IPAK , TO- 220的STripFET ™ V功率MOSFET N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
通孔 N 通道 30 V 48A(Tc) 60W(Tc) TO-220AB
得捷:
MOSFET N-CH 30V 48A TO220AB
贸泽:
MOSFET N-Ch 30V 0.0072 Ohm 48A IPAK STripFET
艾睿:
Create an effective common drain amplifier using this STP60N3LH5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 48A 3-Pin3+Tab TO-220 Tube
Chip1Stop:
Trans MOSFET N-CH 30V 48A 3-Pin3+Tab TO-220 Tube
Win Source:
MOSFET N-CH 30V 48A TO-220
通道数 1
漏源极电阻 7.2 mΩ
耗散功率 60 W
阈值电压 3 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
上升时间 33 ns
输入电容Ciss 1350pF @25VVds
额定功率Max 60 W
下降时间 4.2 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP60N3LH5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SPP80N06S-08 英飞凌 | 功能相似 | STP60N3LH5和SPP80N06S-08的区别 |
IPP80N06S2-08 英飞凌 | 功能相似 | STP60N3LH5和IPP80N06S2-08的区别 |
IPI80N06S2-08 英飞凌 | 功能相似 | STP60N3LH5和IPI80N06S2-08的区别 |