N 通道 STripFET™ DeepGate™，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
N 通道 STripFET™ DeepGate™，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
### MOSFET ，STMicroelectronics
得捷:
MOSFET N-CH 40V 80A DPAK
欧时:
### N 通道 STripFET™ DeepGate™，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
立创商城:
N沟道 40V 80A
艾睿:
This STD80N4F6 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 70000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 40V 80A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab DPAK T/R
DeviceMart:
MOSF N CH 40V 80A DPAK
Win Source:
MOSFET N-CH 40V 80A DPAK
极性 N-CH
耗散功率 70 W
阈值电压 4 V
输入电容 2150 pF
漏源极电压Vds 40 V
连续漏极电流Ids 80A
上升时间 7.6 ns
输入电容Ciss 2150pF @25VVds
额定功率Max 70 W
下降时间 11.9 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
