STMICROELECTRONICS STL17N3LLH6 晶体管, MOSFET, N沟道, 17 A, 30 V, 0.0038 ohm, 10 V, 1 V
The is a N-channel Power MOSFET housed in a PowerFLAT™ package. The device developed using the 6th generation of STripFET™ DeepGATE™ technology with a new gate structure.
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- RDS ON x Qg industry benchmark
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- Extremely low ON-resistance RDS ON
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- High avalanche ruggedness
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- Low gate drive power losses
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- Very low switching gate charge
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- -55 to 150°C Operating junction temperature range
针脚数 5
漏源极电阻 0.0038 Ω
极性 N-Channel
耗散功率 50 W
阈值电压 1 V
漏源极电压Vds 30 V
连续漏极电流Ids 17A
上升时间 30 ns
输入电容Ciss 1690pF @25VVds
额定功率Max 2 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2W Ta, 50W Tc
安装方式 Surface Mount
引脚数 5
封装 PowerVDFN-8
封装 PowerVDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STL17N3LLH6 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
RQ3E180BNTB 罗姆半导体 | 功能相似 | STL17N3LLH6和RQ3E180BNTB的区别 |
STL11NH3LL 意法半导体 | 功能相似 | STL17N3LLH6和STL11NH3LL的区别 |