STS3P6F6

P 沟道 STripFET™ 功率 MOSFET，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics

P 沟道 STripFET™ 功率 MOSFET，STMicroelectronics

STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。

得捷:
MOSFET P-CH 60V 3A 8SOIC

欧时:
STMicroelectronics STripFET 系列 Si P沟道 MOSFET STS3P6F6, 3 A, Vds=60 V, 8引脚 SOIC封装

贸泽:
MOSFET P-Ch 60V 0.13 Ohm 3A STripFET VI

艾睿:
Make an effective common gate amplifier using this STS3P6F6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 2700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes stripfet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R

富昌:
P-Channel 60 V 160 mOhm SMT STripFET VI DeepGATE Power Mosfet SOIC-8

Chip1Stop:
Trans MOSFET P-CH 60V 3A 8-Pin SO T/R

Verical:
Trans MOSFET P-CH 60V 3A 8-Pin SO N T/R

Win Source:
MOSFET P-CH 60V 3A 8SOIC