600V,2A,N沟道MOSFET
表面贴装型 N 通道 600 V 2A（Tc） 45W（Tc） DPAK
得捷:
MOSFET N CH 600V 2A DPAK
立创商城:
STD2LN60K3
贸泽:
MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET
艾睿:
This STD2LN60K3 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 45000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 600V 2A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 600V 2A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK
Verical:
Trans MOSFET N-CH 600V 2A 3-Pin2+Tab DPAK T/R
力源芯城:
600V,2A,N沟道MOSFET
DeviceMart:
MOSFET N CH 600V 2A DPAK
Win Source:
MOSFET N CH 600V 2A DPAK
通道数 1
漏源极电阻 4.5 Ω
极性 N-CH
耗散功率 45 W
阈值电压 4.5 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 2A
上升时间 8.5 ns
正向电压Max 1.5 V
输入电容Ciss 235pF @50VVds
额定功率Max 45 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 45W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free