STGB7NC60H 系列 600 V 14 A N 沟道 PowerMesh IGBT - D2PAK
This powerful and secure IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
额定电压DC 600 V
额定电流 14.0 A
极性 N-Channel
耗散功率 25 W
上升时间 8.50 ns
击穿电压集电极-发射极 600 V
反向恢复时间 37 ns
额定功率Max 80 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 80000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
宽度 9.35 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGB7NC60HDT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
HGT1S7N60C3DS9A 飞兆/仙童 | 功能相似 | STGB7NC60HDT4和HGT1S7N60C3DS9A的区别 |
IRG4BC20KD-SPBF 国际整流器 | 功能相似 | STGB7NC60HDT4和IRG4BC20KD-SPBF的区别 |
IRG4BC10SD-SPBF 国际整流器 | 功能相似 | STGB7NC60HDT4和IRG4BC10SD-SPBF的区别 |